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Discrete Semiconductors
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IGBT
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STMicroelectronics (STE140NF20D)
PartNo:
STE140NF20D
Manufacturers:
STMicroelectronics
Qty:
80
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Description:
MOSFET POWER MOSFET N-CH 200V
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:
140 A
Rds On - Drain-Source Resistance:
12 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
Pd - Power Dissipation:
500 W
Mounting Style:
SMD/SMT
Package / Case:
ISOTOP-4
Packaging:
Tube
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
STE140NF20D Related Product
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STE100STR
STE100SSB
STE100STR
STE100S SB
STE101P-1A
STE145N65M5
STE140NF20D
STE145N65M5
STE1000-60T4MI
STE180-75T2KI
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