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Discrete Semiconductors
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IGBT
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STMicroelectronics (STF6N65M2)
PartNo:
STF6N65M2
Manufacturers:
STMicroelectronics
Qty:
1000
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Description:
MOSFET POWER MOSFET
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Vgs - Gate-Source Breakdown Voltage:
25 V
Id - Continuous Drain Current:
4 A
Rds On - Drain-Source Resistance:
1.35 Ohms
Configuration:
Vgs th - Gate-Source Threshold Voltage:
3 V
Qg - Gate Charge:
9.8 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
20 W
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
Packaging:
Tube
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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