【STF7N65M2】PDF/Datasheet/Manufacturers,electronics components distributor

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Product Information:

RoHS:	Details
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	5 A
Rds On - Drain-Source Resistance:	1.15 Ohms
Configuration:
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	9 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	20 W
Mounting Style:	Through Hole
Package / Case:	TO-220FP-3
Packaging:	Tube

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IGBT 1000V 34A 150W TO247AD

IGBT 600V 107A 366W TO247

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