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STMicroelectronics STFI11N65M2
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STFI11N65M2
Manufacturers: STMicroelectronics
Qty: 300
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Description: MOSFET POWER MOSFET
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:650 V
Vgs - Gate-Source Breakdown Voltage:25 V
Id - Continuous Drain Current:7 A
Rds On - Drain-Source Resistance:670 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:3 V
Qg - Gate Charge:12.5 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:25 W
Mounting Style:SMD/SMT
Package / Case:I2PAKFP-3
Packaging:Tube
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