【STGFW20V60DF】PDF/Datasheet/Manufacturers,electronics components distributor

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All Product > Discrete Semiconductors > IGBT > STMicroelectronics (STGFW20V60DF)

PartNo:	STGFW20V60DF
Manufacturers:	STMicroelectronics
Qty:	600
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Description:	IGBT Transistors IGBT & Power Bipolar
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Product Information:

RoHS:
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.8 V
Maximum Gate Emitter Voltage:	+/- 20 V
Continuous Collector Current at 25 C:	40 A
Gate-Emitter Leakage Current:	250 nA
Power Dissipation:	52 W
Maximum Operating Temperature:	+ 175 C
Package / Case:	TO-3PF
Packaging:	Tube

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