Home
Tel: 86-755-83295289
Email:
mail@cxda.com
English
简体中文
한국어
About Us
All Product
Manufacturers
RFQ
Quality Control
News
Contact Us
PartNo
Keyword
Product Detail
All Product >
Discrete Semiconductors
>
IGBT
>
STMicroelectronics (STI33N60M2)
PartNo:
STI33N60M2
Manufacturers:
STMicroelectronics
Qty:
1000
Request Qty:
Description:
MOSFET POWER MOSFET
PDF:
Quick Quotation
Company Name:
*
Contact Name:
*
Email:
*
Tel:
*
Request Qty:
*
*
Verification Code:
*
Product Information:
RoHS:
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Vgs - Gate-Source Breakdown Voltage:
+/- 25 V
Id - Continuous Drain Current:
26 A
Rds On - Drain-Source Resistance:
125 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
3 V
Qg - Gate Charge:
45.5 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
190 W
Mounting Style:
Through Hole
Package / Case:
I2PAK
Packaging:
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
STI33N60M2 Related Product
STI3400DVC
STI3400DCV
STI3520ACV-ACE
STI3520LCV
STI3520ACV
STI32N65M5
STI32N65M5
STI33N60M2
STI33N60M2
STI3520LCV
STI3520ACV-ACE
STI3400DCV
STI3520LCV
STI35N65M5
STI300N4F6
STI34N65M5
STI30N65M5
STI360N4F6
STI32N65M5
STI32N65M5
STI34N65M5
STI33N60M2
STI35N65M5
STI32N65M5
STI34N65M5
STI33N60M2
STI35N65M5
Electronic Components Distributor
Since 2000
©2001 - 2015 www.cxda.com all rights reservied.
FAQ
Product Index
Contact Us
Quality Control
RFQ
Manufacturers
About Us
Electronic Components Supplier |
China Electronic Components Manufacturer |
Electronic Components Distributor
粤ICP备15038990号