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STMicroelectronics STP23NM60ND
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STP23NM60ND
Manufacturers: STMicroelectronics
Qty: 425
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Description: MOSFET N-channel 600V, 20A FDMesh II
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:600 V
Vgs - Gate-Source Breakdown Voltage:25 V
Id - Continuous Drain Current:19.5 A
Rds On - Drain-Source Resistance:180 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:150 W
Mounting Style:Through Hole
Package / Case:TO-220-3
Packaging:Tube
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