【STW55NM60ND】PDF/Datasheet/Manufacturers,electronics components distributor

Product Detail

All Product > Discrete Semiconductors > IGBT > STMicroelectronics (STW55NM60ND)

Quick Quotation

Product Information:

RoHS:	Details
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	51 A
Rds On - Drain-Source Resistance:	60 mOhms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	350 W
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Packaging:	Tube

IGBT 600V 30A PFC

IGBT 600V 80A 260.4W TO-3P

IGBT 1000V 34A 150W TO247AD

IGBT 600V 107A 366W TO247

IGBT 1200V 16A 70W TO247-3