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Discrete Semiconductors
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IGBT
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Vishay / Siliconix (SUP90P06-09L-E3)
PartNo:
SUP90P06-09L-E3
Manufacturers:
Vishay / Siliconix
Qty:
5580
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Description:
MOSFET 60V 90A 250W 9.3mohm @ 10V
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
- 60 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
90 A
Rds On - Drain-Source Resistance:
9.3 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
2.4 W
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Packaging:
Tube
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RJH60F5DPK-00#T0
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IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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