Home
Tel: 86-755-83295289 Email:
Product Detail
 All Product > Discrete Semiconductors > IGBT > Vishay / Siliconix  (Si4776DY-T1-GE3)
Vishay / Siliconix Si4776DY-T1-GE3
PartNo:

Si4776DY-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 2350
Request Qty:   
Description: MOSFET 30 Volts 11.9 Amps 4.1 Watts
PDF:
Quick Quotation
Company Name:* Contact Name:*  
Email:* Tel:*
Request Qty:* Verification Code:*

Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:11.9 A
Rds On - Drain-Source Resistance:13 mOhms
Configuration:Single with Schottky Diode
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:11.6 nC
Maximum Operating Temperature:
Pd - Power Dissipation:4.1 W
Mounting Style:SMD/SMT
Package / Case:SOIC-8
Packaging:Reel
SLA5222
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IKW08T120
IGBT 1200V 16A 70W TO247-3
Si4776DY-T1-GE3 Related Product
  • Electronic Components Distributor
    Since 2000
  • ©2001 - 2015  www.cxda.com all rights reservied.
  • Electronic Components Supplier  | 
  • China Electronic Components Manufacturer  | 
  • Electronic Components Distributor