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Vishay / Siliconix SiHG73N60E-GE3
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SiHG73N60E-GE3
Manufacturers: Vishay / Siliconix
Qty: 237
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Description: MOSFET 600V 39mOhm@10V 73A N-Ch E-SRS
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:600 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:73 A
Rds On - Drain-Source Resistance:39 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:520 W
Mounting Style:Through Hole
Package / Case:TO-247-3
Packaging:Tube
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