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Discrete Semiconductors
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IGBT
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Vishay / Siliconix (SiHP25N40D-GE3)
PartNo:
SiHP25N40D-GE3
Manufacturers:
Vishay / Siliconix
Qty:
567
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Description:
MOSFET 400V 170mOhm@10V 25A N-Ch D-SRS
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
400 V
Vgs - Gate-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
25 A
Rds On - Drain-Source Resistance:
170 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
44 nC
Maximum Operating Temperature:
Pd - Power Dissipation:
278 W
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Packaging:
Bulk
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