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All Product >
Discrete Semiconductors
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IGBT
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Diodes Incorporated (TB3100H-13-F)
PartNo:
TB3100H-13-F
Manufacturers:
Diodes Incorporated
Qty:
2900
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Description:
Sidacs 275V 100A
PDF:
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Product Information:
RoHS:
Details
Breakover Voltage VBO:
1 kV
Breakover Current IBO Max:
15 mA
Non Repetitive On-State Current:
200 A
Rated Repetitive Off-State Voltage VDRM:
Off-State Leakage Current @ VDRM IDRM:
20 uA
Holding Current Ih Max:
30 mA
On-State Voltage:
1.7 V
Off-State Capacitance CO:
Maximum Operating Temperature:
+ 125 C
Mounting Style:
Through Hole
Package / Case:
FP-2
SLA5222
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RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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TB31213FNG
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