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All Product > Discrete Semiconductors > IGBT > ROHM Semiconductor (TT8J21TR)

PartNo:	TT8J21TR
Manufacturers:	ROHM Semiconductor
Qty:	3000
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Description:	MOSFET P Chan-20V-2.5A Mid-PowerSwitching
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Product Information:

RoHS:	Details
Transistor Polarity:	P-Channel
Vds - Drain-Source Breakdown Voltage:	- 20 V
Vgs - Gate-Source Breakdown Voltage:	10 V
Id - Continuous Drain Current:	2.5 A
Rds On - Drain-Source Resistance:	68 mOhms
Configuration:	Dual Dual Drain
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.25 W
Mounting Style:	SMD/SMT
Package / Case:	TSST-8
Packaging:	Reel

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