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All Product >
Discrete Semiconductors
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IGBT
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InterFET (U309)
PartNo:
U309
Manufacturers:
InterFET
Qty:
119
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Description:
JFET JFET N-Channel
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Drain-Source Current at Vgs=0:
30 mA
Vds - Drain-Source Breakdown Voltage:
10 V
Vgs - Gate-Source Breakdown Voltage:
25 V
Id - Continuous Drain Current:
Rds On - Drain-Source Resistance:
Configuration:
Single
Pd - Power Dissipation:
500 mW
Mounting Style:
Through Hole
Package / Case:
TO-52
Packaging:
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
U309 Related Product
U309
U309
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