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ROHM Semiconductor US6M1TR
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US6M1TR
Manufacturers: ROHM Semiconductor
Qty: 2593
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Description: MOSFET N+P 30 20V 1A
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Product Information:
RoHS:Details
Transistor Polarity:N and P-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:1.4 A
Rds On - Drain-Source Resistance:170 mOhms
Configuration:Dual
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:1.4 nC, 2.1 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:1 W
Mounting Style:SMD/SMT
Package / Case:TUMT-6
Packaging:Reel
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