【ZVN4210GTA】PDF/Datasheet/Manufacturers,electronics components distributor

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All Product > Discrete Semiconductors > IGBT > Diodes Incorporated (ZVN4210GTA)

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Product Information:

RoHS:	Details
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	800 mA
Rds On - Drain-Source Resistance:	1.8 Ohms
Configuration:	Single Dual Drain
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2 W
Mounting Style:	SMD/SMT
Package / Case:	SOT-223-3
Packaging:	Reel

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