【ZVP2106A】PDF/Datasheet/Manufacturers,electronics components distributor

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All Product > Discrete Semiconductors > IGBT > Diodes Incorporated (ZVP2106A)

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Product Information:

RoHS:	Details
Transistor Polarity:	P-Channel
Vds - Drain-Source Breakdown Voltage:	- 60 V
Vgs - Gate-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	- 280 mA
Rds On - Drain-Source Resistance:	5 Ohms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	700 mW
Mounting Style:	Through Hole
Package / Case:	TO-92-3
Packaging:	Bulk

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