【ZVP4424ASTZ】PDF/Datasheet/Manufacturers,electronics components distributor

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All Product > Discrete Semiconductors > IGBT > Diodes Incorporated (ZVP4424ASTZ)

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Product Information:

RoHS:	Details
Transistor Polarity:	P-Channel
Vds - Drain-Source Breakdown Voltage:	- 240 V
Vgs - Gate-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	- 200 mA
Rds On - Drain-Source Resistance:	9 Ohms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:	- 2 V
Qg - Gate Charge:
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	750 mW
Mounting Style:	Through Hole
Package / Case:	TO-92
Packaging:	Bulk

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IGBT 1000V 34A 150W TO247AD

IGBT 600V 107A 366W TO247

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