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Diodes Incorporated ZXMN3A01ZTA
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ZXMN3A01ZTA
Manufacturers: Diodes Incorporated
Qty: 9950
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Description: MOSFET 30V N-Ch ENH Mode 120mOhm 10VGS 3.3A
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:3.3 A
Rds On - Drain-Source Resistance:120 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:1 V
Qg - Gate Charge:2.6 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:970 mW
Mounting Style:SMD/SMT
Package / Case:SOT-89-3
Packaging:Reel
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