【IKW50N65H5FKSA1】PDF/Datasheet/Manufacturers,electronics components distributor

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All Product > Discrete Semiconductors > Transistors > Infineon Technologies (IKW50N65H5FKSA1)

PartNo:	IKW50N65H5FKSA1
Manufacturers:	Infineon Technologies
Qty:	1060
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Description:	IGBT Transistors IGBT PRODUCTS
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Product Information:

RoHS:	Details
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	80 A
Gate-Emitter Leakage Current:	100 nA
Power Dissipation:	305 W
Maximum Operating Temperature:	+ 175 C
Package / Case:	TO-247-3
Packaging:	Tube

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