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IXYS IXLF19N250A
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IXLF19N250A
Manufacturers: IXYS
Qty: 210
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Description: IGBT Transistors High Voltage IGBT 2500V; 19A
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Product Information:
RoHS:Details
Configuration:Single
Collector- Emitter Voltage VCEO Max:2.5 kV
Collector-Emitter Saturation Voltage:3.2 V
Maximum Gate Emitter Voltage:+/- 20 V
Continuous Collector Current at 25 C:32 A
Gate-Emitter Leakage Current:500 nA
Power Dissipation:250 W
Maximum Operating Temperature:+ 150 C
Package / Case:ISOPLUS i4-PAC-3
Packaging:Tube
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