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Cree, Inc. CGH40025F
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CGH40025F
Manufacturers: Cree, Inc.
Qty: 227
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Description: Transistors RF JFET DC-6GHz 28V 25W Gain 13dB GaN HEMT
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Product Information:
RoHS:Details
Transistor Type:HEMT
Technology:GaN SiC
Frequency:2 GHz to 6 GHz
Gain:15 dB
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:120 V
Vgs - Gate-Source Breakdown Voltage:- 10 V to + 2 V
Id - Continuous Drain Current:3:00 上午
Output Power:30 W
Maximum Drain Gate Voltage:-
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:-
Mounting Style:Screw
Package / Case:440166
Packaging:Tube
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