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Cree, Inc. CGH60008D
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CGH60008D
Manufacturers: Cree, Inc.
Qty: 180
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Description: Transistors RF JFET DC-6GHz 8W GaN Gain@ 4GHz 15dB
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Product Information:
RoHS:Details
Transistor Type:HEMT
Technology:GaN SiC
Frequency:4 GHz to 6 GHz
Gain:15 dB
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:120 V
Vgs - Gate-Source Breakdown Voltage:- 10 V to + 2 V
Id - Continuous Drain Current:0.75 A
Output Power:8 W
Maximum Drain Gate Voltage:-
Maximum Operating Temperature:-
Pd - Power Dissipation:-
Mounting Style:SMD/SMT
Package / Case:Bare Die
Packaging:Waffle
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