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CEL NESG2101M16-T3-A
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NESG2101M16-T3-A
Manufacturers: CEL
Qty: 8024
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Description: Transistors RF Bipolar NPN High Frequency
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Product Information:
RoHS:Details
Transistor Type:Bipolar
Technology:SiGe
Transistor Polarity:NPN
Frequency:2 GHz
DC Collector/Base Gain hfe Min:130
Collector- Emitter Voltage VCEO Max:5 V
Emitter- Base Voltage VEBO:1.5 V
Continuous Collector Current:100 mA
Maximum Operating Temperature:
Configuration:Single
Power Dissipation:190 mW
Mounting Style:SMD/SMT
Package / Case:M16
Packaging:Reel
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