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Discrete Semiconductors
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IGBT
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NXP Semiconductors (BUK7K25-40E,115)
PartNo:
BUK7K25-40E,115
Manufacturers:
NXP Semiconductors
Qty:
280
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Description:
MOSFET Dual N-channel 40 V 25 mo FET
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
27 A
Rds On - Drain-Source Resistance:
21.25 mOhms
Configuration:
Dual
Vgs th - Gate-Source Threshold Voltage:
3 V
Qg - Gate Charge:
7.9 nC
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
32 W
Mounting Style:
SMD/SMT
Package / Case:
SOT-1205-8
Packaging:
Reel
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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