Home
Tel: 86-755-83295289
Email:
mail@cxda.com
English
简体中文
한국어
About Us
All Product
Manufacturers
RFQ
Quality Control
News
Contact Us
PartNo
Keyword
Product Detail
All Product >
Discrete Semiconductors
>
IGBT
>
Toshiba (TK6A60W,S4VX)
PartNo:
TK6A60W,S4VX
Manufacturers:
Toshiba
Qty:
142
Request Qty:
Description:
MOSFET N-Ch 6.2A 30W FET 600V 390pF 12nC
PDF:
Quick Quotation
Company Name:
*
Contact Name:
*
Email:
*
Tel:
*
Request Qty:
*
*
Verification Code:
*
Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Vgs - Gate-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
6.2 A
Rds On - Drain-Source Resistance:
680 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
2.7 V to 3.7 V
Qg - Gate Charge:
12 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
30 W
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
Packaging:
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
TK6A60W,S4VX Related Product
TK6A60DRTK6A60D
TK6A65WS5X(M
TK6A60V
TK6A65W
TK6A50
TK6A50D
TK6A50D K6A50D
TK6A53D
TK6A55DA
TK6A60D
TK6A60DR
TK6A60W
TK6A60WS4VX
TK6A65D
TK6A80E
TK6A80E.S4X
TK6A60D
TK6A60DR
TK6A80E,S4X
TK6A65D(STA4,Q,M)
TK6A60D(STA4,Q,M)
TK6A60D(STA4,Q,M)
TK6A60W,S4VX
TK6A60W,S4VX
TK6A60D(STA4,Q,M)
Electronic Components Distributor
Since 2000
©2001 - 2015 www.cxda.com all rights reservied.
FAQ
Product Index
Contact Us
Quality Control
RFQ
Manufacturers
About Us
Electronic Components Supplier |
China Electronic Components Manufacturer |
Electronic Components Distributor
粤ICP备15038990号