【BYG10J-E3/TR】PDF/Datasheet/Manufacturers,electronics components distributor

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All Product > Discrete Semiconductors > Diodes > Vishay Semiconductor Diodes Division (BYG10J-E3/TR)

PartNo:	BYG10J-E3/TR
Manufacturers:	Vishay Semiconductor Diodes Division
Qty:	7766
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Description:	DIODE AVALANCH 600V 1.5A DO214AC
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Product Information:

Minimum Quantity :	1
Packaging:	Cut Tape (CT) Alternate Packaging
Series:	-
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	40V
Current - Average Rectified (Io):	5A
Voltage - Forward (Vf) (Max) @ If:	550mV @ 5A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	-
Current - Reverse Leakage @ Vr:	3mA @ 40V
Capacitance @ Vr, F:	-
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Operating Temperature - Junction:	-65°C ~ 150°C

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