【MT3S20P(TE12L,F)】PDF/Datasheet/Manufacturers,electronics components distributor

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All Product > Discrete Semiconductors > Transistors > Toshiba Semiconductor and Storage (MT3S20P(TE12L,F))

PartNo:	MT3S20P(TE12L,F)
Manufacturers:	Toshiba Semiconductor and Storage
Qty:	975
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Description:	TRANS RF NPN 12V 1GHZ PW-MINI
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Product Information:

Minimum Quantity :	1
Packaging:	Cut Tape (CT) Alternate Packaging
Series:	-
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	7GHz
Noise Figure (dB Typ @ f):	1.45dB @ 1GHz
Gain:	16.5dB
Power - Max:	1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 50mA, 5V
Current - Collector (Ic) (Max):	80mA
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	PW-MINI

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