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Toshiba SSM3J111TU(TE85L)
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SSM3J111TU(TE85L)
Manufacturers: Toshiba
Qty: 1351
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Description: MOSFET Vds=-20V Id=-1A 3Pin
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Product Information:
RoHS:In Transition
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:- 20 V
Vgs - Gate-Source Breakdown Voltage:12 V
Id - Continuous Drain Current:- 1 A
Rds On - Drain-Source Resistance:530 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:800 mW
Mounting Style:SMD/SMT
Package / Case:SOT-323-3
Packaging:Reel
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