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Discrete Semiconductors
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Toshiba (TK12E60W,S1VX)
PartNo:
TK12E60W,S1VX
Manufacturers:
Toshiba
Qty:
476
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Description:
MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Vgs - Gate-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
11.5 A
Rds On - Drain-Source Resistance:
300 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
2.7 V to 3.7 V
Qg - Gate Charge:
25 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
110 W
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Packaging:
AUIRF7342QTR
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STP15N65M5
MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS
SI1913DH-T1-E3
MOSFET DUAL P-CH 20V (D-S)
SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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