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Toshiba Semiconductor and Storage TPCF8101(TE85L,F,M
PartNo:

TPCF8101(TE85L,F,M
Manufacturers: Toshiba Semiconductor and Storage
Qty: 8000
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Description: MOSFET P-CH 12V 6A VS-8
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Product Information:
Packaging:Tube
Series:HiPerFET?, PolarP2?
FET Type:MOSFET N-Channel, Metal Oxide
FET Feature:Standard
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Rds On (Max) @ Id, Vgs:2.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) @ Vgs:92nC @ 10V
Input Capacitance (Ciss) @ Vds:2830pF @ 25V
Power - Max:250W
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
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