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Discrete Semiconductors
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IGBT
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NXP Semiconductors (BT258S-800R,118)
PartNo:
BT258S-800R,118
Manufacturers:
NXP Semiconductors
Qty:
10219
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Description:
SCRs TAPE13 THY-GP
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Details
Rated Repetitive Off-State Voltage VDRM:
800 V
Off-State Leakage Current @ VDRM IDRM:
0.1 mA
On-State RMS Current - It RMS:
8 A
Forward Voltage Drop:
1.3 V
Maximum Gate Peak Inverse Voltage:
5 V
Gate Trigger Voltage - Vgt:
0.4 V
Gate Trigger Current - Igt:
50 uA
Holding Current Ih Max:
6 mA
Mounting Style:
SMD/SMT
Package / Case:
DPAK
Packaging:
Reel
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
BT258S-800R,118 Related Product
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BT258X-500R
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BT258S-800LT
BT258-600R
BT258S-800R
BT258S-800R
BT258S-800LT,118
BT258S-800R,118
BT258S-800R,118
BT258S-800R,118
BT258S-800R,118
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