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Discrete Semiconductors
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IGBT
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Toshiba (2SK879-GR(TE85L,F))
PartNo:
2SK879-GR(TE85L,F)
Manufacturers:
Toshiba
Qty:
2495
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Description:
JFET Junction FET N-Ch 0.3 to 6.5mA 10mA
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Drain-Source Current at Vgs=0:
2.6 mA
Vds - Drain-Source Breakdown Voltage:
10 V
Vgs - Gate-Source Breakdown Voltage:
- 30 V
Id - Continuous Drain Current:
6.5 mA
Rds On - Drain-Source Resistance:
Configuration:
Single
Pd - Power Dissipation:
100 mW
Mounting Style:
SMD/SMT
Package / Case:
SC-70-3
Packaging:
Reel
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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