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NXP Semiconductors NX3008PBKW,115
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NX3008PBKW,115
Manufacturers: NXP Semiconductors
Qty: 7576
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Description: MOSFET 30V 200 MA P-CH TRENCH MOSFET
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Product Information:
RoHS:Details
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:- 30 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:200 mA
Rds On - Drain-Source Resistance:4.1 Ohms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:1.1 V
Qg - Gate Charge:0.72 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:260 mW
Mounting Style:SMD/SMT
Package / Case:SOT-323-3
Packaging:Reel
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