|
PartNo |
Manufacturers |
Description |
Qty |
PDF |
|
| No Record! |
|
|
RN1702JE(TE85L,F) |
Toshiba |
Transistors Switching - Resistor Biased Gen Trans NPN x 2 ESV, 50V, 100A |
3820 |
|
RFQ |
|
|
RN1702JE(TE85L,F) |
Toshiba |
Transistors Switching - Resistor Biased Gen Trans NPN x 2 ESV, 50V, 100A |
3820 |
|
RFQ |
|
|
BFU630F,115 |
NXP Semiconductors |
Transistors RF Bipolar Single NPN 21GHz |
3819 |
|
RFQ |
|
|
BD682STU |
Fairchild Semiconductor |
TRANS PNP DARL 100V 4A TO-126 |
3819 |
|
RFQ |
|
|
BFU630F,115 |
NXP Semiconductors |
Transistors RF Bipolar Single NPN 21GHz |
3819 |
|
RFQ |
|
|
BSP19,115 |
NXP Semiconductors |
TRANS NPN 350V 0.1A SOT223 |
3818 |
|
RFQ |
|
|
BUJ303A,127 |
NXP Semiconductors |
TRANS NPN 500V 5A TO220AB |
3816 |
|
RFQ |
|
|
BC856AW-7-F |
Diodes Incorporated |
TRANS PNP 65V 0.1A SC70-3 |
3816 |
|
RFQ |
|
|
DXT690BP5-13 |
Diodes Incorporated |
TRANS NPN 45V 3A POWERDI5 |
3810 |
|
RFQ |
|
|
FJE3303H1TU |
Fairchild Semiconductor |
Transistors Bipolar - BJT NPN 70 0V/1.5A |
3809 |
|
RFQ |
|
|
UMD12NTR |
Rohm Semiconductor |
TRANS PREBIAS NPN/PNP UMT6 |
3809 |
|
RFQ |
|
|
FJE3303H1TU |
Fairchild Semiconductor |
Transistors Bipolar - BJT NPN 70 0V/1.5A |
3809 |
|
RFQ |
|
|
PBSS4220V,115 |
NXP Semiconductors |
TRANS NPN 20V 2A SOT666 |
3808 |
|
RFQ |
|
|
BD13516STU |
Fairchild Semiconductor |
Transistors Bipolar - BJT NPN Epitaxial Sil |
3807 |
|
RFQ |
|
|
BD13516STU |
Fairchild Semiconductor |
Transistors Bipolar - BJT NPN Epitaxial Sil |
3807 |
|
RFQ |
|
|
MMDT5401-7-F |
Diodes Incorporated |
Transistors Bipolar - BJT -150V 200mW |
3806 |
|
RFQ |
|
|
MMDT5401-7-F |
Diodes Incorporated |
Transistors Bipolar - BJT -150V 200mW |
3806 |
|
RFQ |
|
|
2SC4132T100Q |
Rohm Semiconductor |
TRANS NPN 120V 2A SOT-89 |
3803 |
|
RFQ |
|
|
ZHB6790TA |
Diodes Incorporated |
TRANS 2NPN/2PNP 40V 2A SOT223 |
3803 |
|
RFQ |
|
|
BCP53-16,115 |
NXP Semiconductors |
Transistors Bipolar - BJT TRANS MED PWR TAPE-7 |
3801 |
|
RFQ |
|
|
BCP53-16,115 |
NXP Semiconductors |
Transistors Bipolar - BJT TRANS MED PWR TAPE-7 |
3801 |
|
RFQ |
|
|
HN7G01FE-A(TE85L,F |
Toshiba |
Transistors Bipolar - BJT Vceo=-12V Vds=20V Ic=-400mA Id=50mA |
3800 |
|
RFQ |
|
|
RN1965FE(TE85L,F) |
Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.1W ES6 |
3800 |
|
RFQ |
|
|
HN7G01FE-A(TE85L,F |
Toshiba |
Transistors Bipolar - BJT Vceo=-12V Vds=20V Ic=-400mA Id=50mA |
3800 |
|
RFQ |
|
|
DTA114YUAT106 |
Rohm Semiconductor |
TRANS PREBIAS PNP 200MW UMT3 |
3797 |
|
RFQ |
|
|
DTC123EETL |
Rohm Semiconductor |
TRANS PREBIAS NPN 150MW EMT3 |
3796 |
|
RFQ |
|
|
DTA124EUBTL |
ROHM Semiconductor |
Transistors Switching - Resistor Biased TRANS DIGI BJT PNP 100MA |
3795 |
|
RFQ |
|
|
2SD1207T-AE |
ON Semiconductor |
Transistors Bipolar - BJT BIP NPN 2A 50V |
3795 |
|
RFQ |
|
|
DTA124EUBTL |
ROHM Semiconductor |
Transistors Switching - Resistor Biased TRANS DIGI BJT PNP 100MA |
3795 |
|
RFQ |
|
|
2SD1207T-AE |
ON Semiconductor |
Transistors Bipolar - BJT BIP NPN 2A 50V |
3795 |
|
RFQ |