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EPC EPC8003ENGR
PartNo:

EPC8003ENGR
Manufacturers: EPC
Qty: 120
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Description: TRAN GAN 100V 2.5A BUMPED DIE
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Product Information:
Packaging:Tube Alternate Packaging
Series:HEXFETR
FET Type:MOSFET N-Channel, Metal Oxide
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Rds On (Max) @ Id, Vgs:4.9 mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:2.5V @ 100μA
Gate Charge (Qg) @ Vgs:56nC @ 4.5V
Input Capacitance (Ciss) @ Vds:3810pF @ 25V
Power - Max:140W
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:D-Pak
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