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EPC EPC8005ENGR
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EPC8005ENGR

Manufacturers: EPC
Qty: 210
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Description: TRAN GAN 65V 2.9A BUMPED DIE
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Product Information:

Packaging:Tube
Series:HEXFETR
FET Type:MOSFET N-Channel, Metal Oxide
FET Feature:Standard
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Rds On (Max) @ Id, Vgs:36 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:4V @ 250μA
Gate Charge (Qg) @ Vgs:110nC @ 10V
Input Capacitance (Ciss) @ Vds:1900pF @ 25V
Power - Max:160W
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
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