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GeneSiC Semiconductor (GA10JT12-247)
PartNo:
GA10JT12-247
Manufacturers:
GeneSiC Semiconductor
Qty:
310
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Description:
TRANS SJT 1.2KV 10A
PDF:
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Product Information:
Packaging:
Cut Tape (CT) Alternate Packaging
Series:
SuperMESH5?
FET Type:
MOSFET N-Channel, Metal Oxide
FET Feature:
Standard
Drain to Source Voltage (Vdss):
800V
Current - Continuous Drain (Id) @ 25°C:
2.5A (Tc)
Rds On (Max) @ Id, Vgs:
3.5 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:
5V @ 100μA
Gate Charge (Qg) @ Vgs:
9.5nC @ 10V
Input Capacitance (Ciss) @ Vds:
130pF @ 100V
Power - Max:
60W
Mounting Type:
Surface Mount
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:
TO-252, (D-Pak)
1N5822
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New and original,In stock
FH12F-13S-0.5SH(55)
New and original,In stock
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GA10JT12-247
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