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Vishay Siliconix SIA817EDJ-T1-GE3
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SIA817EDJ-T1-GE3
Manufacturers: Vishay Siliconix
Qty: 1909
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Description: MOSFET P-CH 30V 4.5A SC-70-6
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Product Information:
Packaging:Tube
Series:HEXFETR
FET Type:MOSFET N-Channel, Metal Oxide
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:195A (Tc)
Rds On (Max) @ Id, Vgs:2.6 mOhm @ 180A, 10V
Vgs(th) (Max) @ Id:4V @ 250μA
Gate Charge (Qg) @ Vgs:540nC @ 10V
Input Capacitance (Ciss) @ Vds:19860pF @ 50V
Power - Max:520W
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247AC
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