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Discrete Semiconductors
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Diodes
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ON Semiconductor (EFC6605R-TR)
PartNo:
EFC6605R-TR
Manufacturers:
ON Semiconductor
Qty:
1840
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Description:
MOSFET
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Vgs - Gate-Source Breakdown Voltage:
10 V
Id - Continuous Drain Current:
10 A
Rds On - Drain-Source Resistance:
13.3 mOhms
Configuration:
Dual Common Drain
Vgs th - Gate-Source Threshold Voltage:
500 mV to 1.3 V
Qg - Gate Charge:
19.8 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.6 W
Mounting Style:
SMD/SMT
Package / Case:
EFCP-6
Packaging:
Reel
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EFC6605R-TR Related Product
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EFC6604R-TR
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EFC6617R-TF
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EFC6611R-A-TF
EFC6602R-A-TR
EFC6602R-A-TR
EFC6605R-TR
EFC6605R-TR
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