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Discrete Semiconductors
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Fairchild Semiconductor (FDN5630_F095)
PartNo:
FDN5630_F095
Manufacturers:
Fairchild Semiconductor
Qty:
3000
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Description:
MOSFET GATE OX, 60V, NCH, .120MO (6V), TRENCH
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
1.7 A
Rds On - Drain-Source Resistance:
120 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
2.4 V
Qg - Gate Charge:
7 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
500 mW
Mounting Style:
SMD/SMT
Package / Case:
SSOT-3
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SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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