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NXP Semiconductors PSMN1R5-30BLEJ
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PSMN1R5-30BLEJ
Manufacturers: NXP Semiconductors
Qty: 126
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Description: MOSFET N-channel 30 V 1.5 mo FET
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:120 A
Rds On - Drain-Source Resistance:1.3 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:1.7 V
Qg - Gate Charge:228 nC
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:401 W
Mounting Style:SMD/SMT
Package / Case:D2PAK-2
Packaging:Reel
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