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Discrete Semiconductors
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STMicroelectronics (STU11N65M2)
PartNo:
STU11N65M2
Manufacturers:
STMicroelectronics
Qty:
1000
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Description:
MOSFET POWER MOSFET
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Vgs - Gate-Source Breakdown Voltage:
25 V
Id - Continuous Drain Current:
7 A
Rds On - Drain-Source Resistance:
670 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:
3 V
Qg - Gate Charge:
12.5 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
85 W
Mounting Style:
Through Hole
Package / Case:
IPAK-3
Packaging:
Tube
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SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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