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Discrete Semiconductors
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Diodes
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ON Semiconductor (VEC2616-TL-H)
PartNo:
VEC2616-TL-H
Manufacturers:
ON Semiconductor
Qty:
1623
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Description:
MOSFET PCH+NCH 4V DRIVE SERIES
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N and P-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
3 A
Rds On - Drain-Source Resistance:
137 mOhms
Configuration:
Dual Complementary
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
10 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
900 mW
Mounting Style:
SMD/SMT
Package / Case:
VEC-8
Packaging:
Reel
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MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms
STP15N65M5
MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS
SI1913DH-T1-E3
MOSFET DUAL P-CH 20V (D-S)
SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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VEC2315-TL-H
VEC2616-TL-H
VEC2616-TL-H
VEC2315-TL-H
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