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All Product >
Discrete Semiconductors
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IGBT
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ON Semiconductor (BS108ZL1G)
PartNo:
BS108ZL1G
Manufacturers:
ON Semiconductor
Qty:
4278
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Description:
MOSFET 200V 250mA Logic Level N-Channel
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
250 mA
Rds On - Drain-Source Resistance:
8 Ohms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
350 mW
Mounting Style:
Through Hole
Package / Case:
TO-92-3
Packaging:
Ammo Pack
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IKW08T120
IGBT 1200V 16A 70W TO247-3
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