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Cree, Inc. C2M1000170D
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C2M1000170D
Manufacturers: Cree, Inc.
Qty: 2396
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Description: MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:1.7 kV
Vgs - Gate-Source Breakdown Voltage:- 10 V, + 25 V
Id - Continuous Drain Current:4.9 A
Rds On - Drain-Source Resistance:1 Ohms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:2.4 V
Qg - Gate Charge:13 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:69 W
Mounting Style:Through Hole
Package / Case:TO-247-3
Packaging:Tube
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