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Discrete Semiconductors
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IGBT
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Fairchild Semiconductor (FDC655BN)
PartNo:
FDC655BN
Manufacturers:
Fairchild Semiconductor
Qty:
22263
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Description:
MOSFET SINGLE NCH LOG LVEL PWR TRENCH MOSFET
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
6.3 A
Rds On - Drain-Source Resistance:
25 mOhms
Configuration:
Single Quad Drain
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.6 W
Mounting Style:
SMD/SMT
Package / Case:
SSOT-6
Packaging:
Reel
SLA5222
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RJH60F5DPK-00#T0
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APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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