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All Product >
Discrete Semiconductors
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IGBT
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Fairchild Semiconductor (FQP6N40C)
PartNo:
FQP6N40C
Manufacturers:
Fairchild Semiconductor
Qty:
1077
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Description:
MOSFET 400V N-Ch Q-FET advance C-Series
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
400 V
Vgs - Gate-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
6 A
Rds On - Drain-Source Resistance:
1 Ohms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
73 W
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Packaging:
Tube
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IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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