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ON Semiconductor NTJD1155LT1G
PartNo:

NTJD1155LT1G
Manufacturers: ON Semiconductor
Qty: 20501
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Description: MOSFET 8V +/-1.3A P-Channel w/Level Shift
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Product Information:
RoHS:Details
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:- 8 V
Vgs - Gate-Source Breakdown Voltage:1 V
Id - Continuous Drain Current:1.3 A
Rds On - Drain-Source Resistance:260 mOhms
Configuration:Dual
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:400 mW
Mounting Style:SMD/SMT
Package / Case:SC-88-6
Packaging:Reel
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